smd type transistors features absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 5v continuous collector current i c 1ma peak pulse current i cm 2a base current i b 200 ma power dissipation at t amb =25 p tot 1w operating and storage temperature range t j :t stg -65to150 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors FCX493 smd type transistors smd type transistors smd type transistors product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min max unit breakdown voltages v (br)cbo i c =100a 120 v breakdown voltages v ceo(sus) i c =10ma* 100 v breakdown voltages v (br)ebo i e =100a 5 v i cbo v cb =100v 100 na i ces v ces =100v 100 na emitter cut-off current i ebo v eb =4v 100 na i c =500ma, i b =50ma 0.3 v i c =1a, i b =100ma 0.6 v base-emitter saturation voltage v be(sat) i c =1a, i b =100ma 1.15 v base-emitter turn on voltage v be(on) i c =1a, v ce =10v 1.0 v i c =1ma, v ce =10v* 100 i c =250ma, v ce =10v* 100 300 i c =500ma, v ce =10v* 60 i c =1a, v ce =10v* 20 transition frequency f t i c =50ma, v ce =10v,f=100mhz 150 mhz collector-base breakdown voltage c obo v cb =10v, f=1mhz 10 pf * measured under pulsed conditions. pulse width=300s. duty cycle 2% collector cut-off currents static forward current transfer ratio h fe v ce(sat) collector-emitter saturation voltage marking marking n93 FCX493 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors smd type transistors smd type transistors product specification 4008-318-123
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